Ion source SPR-100
Ion source SPR-100
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Product Overview
Scion Plasma’s patented broad-beam ion source is a next-generation plasma tool designed to enhance magnetron sputtering, PECVD, and surface treatment processes. Developed through comprehensive plasma simulations using the company’s proprietary ASTRA software, the ion source offers independent control of ion energy and ion current. Its narrow, single-peaked ion-energy distribution enables precise energy transfer to surface atoms during deposition – facilitating the growth of dense polycrystalline films at room temperature, which is ideal for coating heat-sensitive substrates. When paired with a magnetron (click here to know more about Scion Plasma's SMC), the ion source enables a novel soft-sputtering mode featuring low sputtering voltage and high current. This mode delivers substantially higher deposition rates while minimizing damage to delicate surfaces. In PECVD applications, the broad-beam high-density plasma promotes efficient precursor dissociation, yielding high deposition rates, dense films, and smooth surfaces that are particularly suitable for barrier and optical coatings. The broad-beam ion source is equally effective for surface-treatment applications that demand low ion energy and high ion flux. Engineered for long-term stability, the ion source delivers extended operation with minimal maintenance, making it a robust and versatile tool for advanced thin-film processing.
The SPR-100 broad-beam ion source is designed for laboratory research applications. It generates a uniform, single ion beam approximately 80 mm in diameter with tunable ion energies from 10 to 150 eV and ion currents from 10 to 800 mA. A flexible head design allows the beam incident angle to be adjusted from 0° to 75°, giving researchers exceptional flexibility in experiment design and supporting a broad range of equipment geometries.
Product Features
- Narrow ion energy distribution
- Independently tunable ion energy and ion current over a wide range
- Fully compatible with magnetron sputtering. The ion source does not require a dedicated gas flow, as it operates using the process gases already present in the chamber. For specific applications, such as MetaMode deposition of oxide thin films, a dedicated gas feed to the ion source can be introduced to further enhance film oxidation.
- Stable operation over a long period
- Easy maintenance
- Flex head adjustable from 0 to 75 degrees
- Standard vacuum feedthrough using CF flange, KF flange, and base plate adapter
- N-type coaxial power connector
- ¼” push-to-connect water connectors
Accessories for Required Ion Source Operation
1. RF Power Supply
- Frequency: 13.56 MHz
- Output Power: 300–1000 W
Customer may source any compatible RF supply.
2. DC Power Supply
- Output Voltage: 0-150 V positive
- Output Current: 0-1 A
Customer may source any compatible DC supply.
3. RF–DC Filter Box
- RF Frequency: 13.56 MHz
- Breakdown Voltage: 1000 Vpp
- RF Power: 300 W
- DC Current: 1 A
Customer may source any compatible RF-DC Filter. You may also choose our SP-FT-01-1000 RF-DC Filter Box.
4. Installation Flange Adapters
Customers can select one of our standard flange adapters listed below to match the port on their vacuum system.
CF flange adapters:
o 2-3/4” CF flange adapter: CFA0111304LSS
o 4” CF flange adapter: CFA0112304LSS
o 6” CF flange adapter: CFA0113304LSS
KF flange adapters:
o KF25 flange adapter: KFA0121304LSS
o KF40 flange adapter: KFA0122304LSS
o KF50 flange adapter: KFA0123304LSS
Baseplate adapter through 1” hole: BPA0131304LSS
5. Coaxial Power Cables
Our SPR-100 ion source uses Type N connectors. Customers may source compatible coaxial cables for connection to the RF and DC power supplies. They may also choose from our selection of standard coaxial cables with Type N male connectors, available in various lengths.
Specifications (Datasheet Download)
|
Model |
SPR-100 Ion Source |
|
Vacuum |
HV and UHV |
|
Typical Operation Pressure |
1 – 200 mTorr |
|
Process Gases |
All common gases (Ar, O2, N2, CH4, H2) |
|
Discharge DC voltage |
0 – 150 VDC |
|
Discharge DC current |
0 – 800 mA |
|
DC+RF Power |
0 – 100 W (DC), 10 – 100 W (RF) |
|
Distance from Substrate |
1” – 5” |
|
Internal Mounting |
3/4” and 1” SS tubing (any length) with baseplate feedthrough adapter, CF flange adapter, and KF flange adapter |
|
External Mounting |
O-ring flange per customer specification |
|
Cooling Water |
0.2 – 0.4 gpm, <40 PSI, 1/4” push-to-connect |
|
Electrical Connection |
N-type connector |
|
Process (Recommended) |
Ion beam enhanced magnetron sputtering, PECVD, etching |
|
Processed Materials |
Metals, semiconductors, dielectrics |
|
Warranty |
1-year product warranty |
Dimensions
Ion energy distribution, showing narrow
ion energy peaks tunable over a wide range.
X-ray diffraction patterns of piezoelectric AlN thin films deposited at room temperature using the broad beam ion source enhanced sputtering.
SEM images and optical transmittance of ultra-thin silver films deposited with and without using the broad beam ion source. The ion source treatment results in much thinner and continuous films.
Resistivity of ultra-thin silver films prepared with and without the ion beam. The optical images show 100-grid adhesion test on silver films prepared with (a) and without (b) the ion beam treatment.
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